Reliable Ohmic Contact Properties for Ni/Hydrogen-Terminated Diamond at Annealing Temperature up to 900 °C

Ohmic contact with high thermal stability is essential to promote hydrogen-terminated diamond (H-diamond) electronic devices for high-temperature applications. Here, the ohmic characteristics of Ni/H-diamond at annealing temperatures up 900 °C are investigated. The measured current–voltage curves and deduced specific resistance (ρC) used evaluate quality properties. Schottky contacts formed as-received 300 °C-annealed Ni/H-diamonds. When temperature increased 500 °C, properties ρC 1.5 × 10−3 Ω·cm2 Ni/H-diamond. As rises determined be as low 6.0 10−5 Ω·cm2. It believed that formation Ni-related carbides interface promotes decrease in ρC. Ni metal extremely promising electrode H-diamond-based °C.